Type: N
Package Type: TO-220F/TO-247
Gate-Source Voltage (Vgs): ±30V
Device Type: IGBT
Switching Speed: Faster Switching Speed
Application Frequency: 20KHz-60KHz
Internal Resistance: Ultra Small Internal Resistance
Capacitance: Ultra-low Junction Capacitance
Device Type: Power Discrete Devices
Gate-Source Voltage (Vgs): ±30V
Manufacturer: Lingxun
Category: Mosfet
Category: Mosfet
Gate-Source Voltage (Vgs): ±30V
Country Of Origin: China, Brand New, Unused
Type: N
Package Type: TO-220F/TO-247
Gate-Source Voltage (Vgs): ±30V
Category: Mosfet
Country Of Origin: China, Brand New, Unused
Gate-Source Voltage (Vgs): ±30V
Power Consumption: Low Power Loss
Structure Process: Trench/SGT
Trench Process Advantages: Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized.
Application: Home Appliances,Motor Drives,Fan, Pumps, Solar String Inverter
Switching Speed: Faster Switching Speed
Package Type: TO-247
Features: Igh Current Density Schottky, 150°C Operating Junction Temperature. • Offer 20A Half Wave And 40A Full Wave Rectification,Low Power Loss, High Efficiency.
Rohs Compliant: Rohs
Application: Power Supply Units,Motor Drives,RF Amplifiers,Wireless Communications
Resistance: Low On Resistance
Applications: Power Inverters, Electric Vehicles, Grid Infrastructure, Industrial Drives, Consumer Electronics, Telecommunications Equipment, Battery Chargers
Material: Silicon Carbide
Junction Capacitance: Low Junction Capacitance
Voltage: High Voltage
Efficiency: High Efficiency
86-189-8872-0515(Work Time)
