ID:7A
Drain-Source Voltage:650V
RDSON-typ VGS=10V:520mΩ
ID:30A
Drain-Source Voltage:650V
RDSON-typ VGS=10V:99mΩ
ID:7A
Drain-Source Voltage:650V
RDSON-typ VGS=10V:520mΩ
ID:30A
Drain-Source Voltage:650V
RDSON-typ VGS=10V:120mΩ
ID:7A
Drain-Source Voltage:650V
RDSON-typ VGS=10V:350mΩ
ID:4A
Drain-Source Voltage:650V
RDSON-typ VGS=10V:880mΩ
ID:7A
Drain-Source Voltage:650V
RDSON-typ VGS=10V:350mΩ
Type:N
Manufacturer:Lingxun
Device Type:Power Discrete Devices
Product Name:Super Junction MOSFET,Cool MOS
Type:N
High light:Ultra-low Junction Capacitance,Ultra Small Internal Resistance,
Type:N
High light:Ultra Low Gate Charge, Fast switching capability,ility,
Manufacturer:Lingxun
High light:100% Avalanche Tested Much Lower Ron*A Performance For On-state Efficiency
Manufacturer:Lingxun
Type:N
Internal Resistance:Ultra Small Internal Resistance
Capacitance:Ultra-low Junction Capacitance
Device Type:Super Junction MOSFET