ID:7A
VDSS:600V
RDSON-typ VGS=10V:510mΩ
ID:7A
VDSS:650V
RDSON-typ VGS=10V:520mΩ
ID:47A
Drain-Source Voltage:600V
RDSON-typ VGS=10V:68mΩ
Type:N
Application:New Energy Vehicles, Photovoltaic Energy Storage, Power Management, Lighting Power Supply
High light:100% Avalanche Tested,Ultra Low On-Resistance,Low gate charge
Manufacturer:Lingxun
High light:Much lower FOM for fast switching effciency, EMI Improved Design,Fast switching capability,Ultra Low Gate Charge
Type:N
Device Type:Power Discrete Devices
High light:Extremely low losses due to very low FOM R dson*Qg and E oss, Very high commutation ruggedness,Robust design with better EAS performance
Frequency:High Frequency
Type:N
Device Type:Power Discrete Devices
High light:PFC Circuit Super Junction MOSFET, Super Junction MOSFET Practical, Multiscene Super Junction N Type Mosfet
Product name:Super Junction MOSFET/Cool MOS
High light:Very low intrinsic capacitances,Very good manufacturing repeatability,Gate charge minimized
Device Type:Power Discrete Devices
Product Name:Super Junction MOSFET
Manufacturer:Lingxun
Emi Margin:Large EMI Margin
Application:PFC stages, hard switching PWM stages and resonant switching PWM stages e.g. PC Silverbox, Adapter, LCD & PDP TV, Lightning, Server, Telecom and UPS.
Supply Ability:600KK/year
Manufacturer:Lingxun
Product Name:Super Junction Mosfet,Cool mosfet
Manufacturer:Lingxun
Application:TV Power, High Performance Charger,Adapter,LED Lighting Power LED/LCD/PDP TV and monitor Lighting ,Solar/Renewable,UPS-Micro Inverter System,Power Supply
Internal Resistance:Ultra Small Internal Resistance
Capacitance:Ultra-low Junction Capacitance
Device Type:Power Discrete Devices