high voltage semiconductor online manufacture

LC65R600D Super Junction MOSFET with Large EMI Margin and 100% Avalanche Tested Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(m) Qg (nC) Ciss (pF) Min. Min. Min. Max. ID TYP ... Read More

Power Discrete Devices N Type Super Junction MOSFET with Large EMI Margin Product Description: One of the standout features of the Lingxun Super Junction MOSFET is its very high commutation ruggedness. This ... Read More

Power Discrete Devices Super Junction MOSFET with N-Type and Large EMI Margin Product Description: One of the key advantages of the Super Junction MOSFET is its 100% avalanche tested design, which ensures ... Read More

Power Discrete Devices with Ultra Low On-Resistance and Large EMI Margin Product Description: One of the standout features of this MOSFET is its 100% avalanche testing, which ensures reliable performance even ... Read More

650V Smartphones Lower On-Resistance Super Junction Mosfet For PFC Product Description: One of the key features of this MOSFET is its 100% avalanche tested performance, which ensures that it can withstand even ... Read More

30A 650V 99m Low Conduction Loss Fast Recovery Time Cool Mosfet N-channel Super Junction MOSFET Part No.:LCF65R075B Package:TO-247 MAIN CHARACTERISTICS ID :43A VDSS:650V RDSON-typ VGS=10V:72m FEATURES Fast ... Read More

30A 650V 99m Low Conduction Loss Fast Recovery Time Cool Mosfet N-channel Super Junction MOSFET Part No.:LCF60R075B Package:TO-247 MAIN CHARACTERISTICS ID :42A VDSS:600V RDSON-typ VGS=10V:64m FEATURES Reduced ... Read More

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