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Excellent Gate Charge N Channel Super Junction MOSFET 4A650V LCS65R900 High Power Semiconductor Id:4A Vdss:650V Rdson-typ(@Vgs=10V):840m Features: High Dense Super Junction Design Excellent Gate Charge x RDS(ON... Read More

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Power Faster Switching Speed Isolated Gate Bipolar Transistor For Power Supply Units Product Description: This IGBT device is designed for application frequency ranges from 20KHz to 60KHz. It has a voltage ... Read More

High Efficiency Insulated Gate Bipolar Transistor For Electric Motors Product Description: Designed for extreme performance, this IGBT device boasts a package type of TO-247, which is widely used in high ... Read More

Product Description: Voltage Low Leakage Power MOSFET The N type High Power Semiconductor is a type of semiconductor that features low leakage and high-temperature resistance. Its ability to resist high ... Read More

Product Description: Power N Type Low Junction Capacitance Transistor One of the unique features of this semiconductor is its low junction capacitance. This attribute ensures that there is minimal power loss ... Read More

Product Description: High Efficiency is a crucial attribute for high-power electronic systems, and our product is designed to deliver it. It ensures that the system operates optimally, with minimal energy loss, ... Read More

Product Description: One of the key features of High Voltage Power Semiconductors is their ability to handle high voltages and currents efficiently. This makes them essential components in power generation and ... Read More