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Durability Silicon Carbide MOSFET High Voltage Device For Electronics Tool Product Description: Manufactured by Lingxun, a leading provider of power electronics solutions, this MOSFET is suitable for a wide ... Read More

Frequency Low On Resistance Silicon Carbide MOSFET for Telecommunication Product Description: The Lingxun Silicon Carbide MOSFET is ideal for use in various applications, including power factor correction, ... Read More

High Consistency Super Junction MOSFET Industrial Cool MOS For PFC Circuit Product Description: One of the key advantages of the Super Junction MOSFET is its much lower Ron*A performance, which translates to ... Read More

Durable Silicon Carbide Semiconductor High Power Transistor SiC MOS Multifunctional Product Description: With its low on resistance, the Silicon Carbide MOSFET is able to operate at higher frequencies with less ... Read More

Reliable And Rugged High Power MOSFET TO-247 For Uninterruptible Power Supply Product Description: This series MOSFET is a type N device that is specifically designed for use in high power applications. With a ... Read More

Altra-Low Internal Resistance High Voltage MOSFET For Charging Pile FEATURES Low gate charge Low RDS(on) per chip area(Low FOM) Very low switching and conduction loss Extremely high commutation ruggedness ... Read More

Durable Industrial High Power MOSFET Heat Dissipation Metal Oxide Mosfet Product Description: The MOSFET is a type N device and has a gate-source voltage (Vgs) of 30V, making it perfect for use in high power ... Read More

Power Discrete Devices Super Junction MOSFET Low On Resistance SJ MOS For Lighting Product Description: One of the key advantages of the Super Junction MOSFET is its large EMI margin, making it an ideal choice ... Read More

Low Power Consumption SMPS Super Junction MOSFET For High Power Application Product Description: One of the key features of this MOSFET is its very high commutation ruggedness, making it an ideal choice for ... Read More

5A 650V 780m N Channel Super Junction MOSFET TO-252 Surface Mount Hign Power Mos N-channel Super Junction MOSFET Part No.:LC65R900D Package:TO-252 MAIN CHARACTERISTICS ID:5A VDSS:650V RDSON-typ VGS=10V:780m ... Read More