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50A 650V Easy Parallel Switching High Power IGBT For Uninterruptible Power Supplies MAIN CHARACTERISTICS Ic @TC=100 50A VCE 650V VCE(sat)-typ 1.8V FEATURES Trench and field-stop technology Easy parallel ... Read More

60A 650V N-Channel High Power IGBT For Energy Storage Solar String Inverter MAIN CHARACTERISTICS Ic @TC=100 60A VCE 650V VCE(sat)-typ 1.8V FEATURES Trench and field-stop technology Easy parallel switching ... Read More

75A 650V TO-247 High Power IGBT For Uninterruptible Power Supplies MAIN CHARACTERISTICS Ic @TC=100 75A VCE 650V VCE(sat)-typ 1.8V FEATURES Trench and field-stop technology Easy parallel switching capability ... Read More

LC65R600D Super Junction MOSFET with Large EMI Margin and 100% Avalanche Tested Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(m) Qg (nC) Ciss (pF) Min. Min. Min. Max. ID TYP ... Read More

20A650V Super Junction MOSFET for Telecom Server Power Supplies LC65R190F Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(m) Qg (nC) Ciss (pF) Min. Min. Min. Max. ID TYP MAX Typ ... Read More

Large EMI Margin Super Junction MOSFET For High Power Supplies Product Description: One of the key features of this MOSFET is its 100% avalanche tested design, which ensures very high commutation ruggedness. ... Read More