sic power mosfet online manufacture

11A 650V 350m Excellent Gate Charge Super Junction MOSFET For Converters N-channel Super Junction MOSFET Part No.:LCS65R380D Package:TO-252 MAIN CHARACTERISTICS ID:11A VDSS:650V RDSON-typ VGS=10V: 350m FEATURES ... Read More

Excellent Gate Charge N Channel Super Junction MOSFET 4A650V LCS65R900 High Power Semiconductor Id:4A Vdss:650V Rdson-typ(@Vgs=10V):840m Features: High Dense Super Junction Design Excellent Gate Charge x RDS(ON... Read More

15A 650V 238m Low Switching High Power Semiconductor For DC-DC Converters N-channel Super Junction MOSFET Part No.:LC65R280D Package:TO-252 MAIN CHARACTERISTICS ID:15A VDSS:650V RDSON-typ VGS=10V:238m FEATURES ... Read More

Enhanced High Power IGBT For For Power Control And Conversion Product Description: As an IGBT module, this high power semiconductor device is designed to provide reliable and efficient performance in a wide ... Read More

High Input Impedance High Power IGBT For Consumer Electronics Product Description: This IGBT device comes in a TO-247 package type that is easy to install and maintain. The package is made of high-quality ... Read More

Faster Switching Speed Power IGBT Device For Grid infrastructureProduct Description:With a voltage rating of 650V-1200V, this product can handle even the toughest of tasks. Its faster switching speed makes it ... Read More

Clean And Stable High Power IGBT With Fast Switching Speed For Automotive Electronics Product Description: Our High Power IGBT product is a combination of the best qualities of Metal-Oxide-Semiconductor Field... Read More

Ultra Switching Inverter IGBT Power Semiconductor for High Capacity Product Description: The Inverter IGBT features a through-hole mounting style and a TO-247 package type, making it easy to install and ... Read More

650V IGBT Power Semiconductor with High Input Impedance in TO-247 Package Product Description: The Inverter IGBT has a Collector-Emitter Voltage ranging from 650V to 1200V, making it an ideal choice for high ... Read More

19A 600V 160m Reduced Switching High Power Semiconductor For Industrial Power Supplies N-channel Super Junction MOSFET Part No.:LC60R190D Package:TO-220F MAIN CHARACTERISTICS ID:19A VDSS:600V RDSON-typ VGS=10V... Read More