high voltage semiconductor online manufacture

Stable Frequency Low VF Schottky Diode For Portable ElectronicsProduct Description:One of the key features of this product is its high current density Schottky construction, which allows it to offer 20A half ... Read More

Low Reverse Recovery Time Low VF Schottky For Consumer Electronics Product Description: Our Low VF Schottky boasts a high current density Schottky, allowing for 20A half-wave and 40A full-wave rectification. ... Read More

Strong Anti Surge Current Ability Silicon Carbide MOSFET For Battery Chargers Product Description: The Silicon Carbide MOSFET is designed to offer high performance and efficiency in power inverters, electric ... Read More

20A300V Low VF Schottky Solar Panel Configurations TO-220F HBM20L300FCT Product Description: The product comes with a model number of HBM20L300FCT which is perfect for efficient tracking and identification. The ... Read More

Excellent Gate Charge Super Junction MOSFET For Industrial UPS Product Description: One of the key features of this Super Junction MOSFET is its much lower Ron*A performance. This translates to improved on... Read More

6A 650V N-Channel Enhancement Mode Power IGBT For Vacuum Cleaner MAIN CHARACTERISTICS IC @TC=100 6A VCE 650V VCE(sat)-typ 1.70V FEATURES High ruggedness performance Very tight parameter distribution Positive ... Read More

15A 650V N-Channel Enhancement Mode Power IGBT For General Inverter Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national high-tech enterprise that focuses on packaging and ... Read More

50A 650V Reliable And Rugged Low Frequency Power IGBT For Portable Power Station MAIN CHARACTERISTICS Ic @TC=100 50A VCE 650V VCE(sat)-typ 1.65V FEATURES Positive temperature coefficient Fast Switching Low VCE... Read More

60A 650V Low switching loss Low Frequency Power IGBT For Boost MAIN CHARACTERISTICS Ic @TC=100 60A VCE 650V VCE(sat)-typ 1.7V FEATURES Positive temperature coefficient Fast Switching Low VCE(sat) Reliable and ... Read More

60A 650V N-Channel High Power IGBT For Energy Storage Solar String Inverter MAIN CHARACTERISTICS Ic @TC=100 60A VCE 650V VCE(sat)-typ 1.8V FEATURES Trench and field-stop technology Easy parallel switching ... Read More