high voltage semiconductor online manufacture

20A80V SBT20V80CT Fast Switching Speed Low VF Schottky Diodes For Rectifier Part Number Package Die Io (A) VBR @IR VF(25) @IF IR(25) @VBR VF(125) @IF IR (125 IFSM (A) Tj () Min (V) IF (A) Typ (V) Max (V) Typ ... Read More

30A100V SBT30L100FCT Fast Switching Speed Low VF Schottky Diodes TO-220F Part Number Package Die Io (A) VBR @IR VF(25) @IF IR(25) @VBR VF(125) @IF IR (125 IFSM (A) Tj () Min (V) IF (A) Typ (V) Max (V) Typ (uA) ... Read More

10A150V SBT10L150SFCT Fast Switching Speed Low VF Schottky Part Number Package Die Io (A) VBR @IR VF(25) @IF IR(25) @VBR VF(125) @IF IR (125 IFSM (A) Tj () Min (V) IF (A) Typ (V) Max (V) Typ (uA) Max (uA) IF (A... Read More

LC65R600D Super Junction MOSFET with Large EMI Margin and 100% Avalanche Tested Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(m) Qg (nC) Ciss (pF) Min. Min. Min. Max. ID TYP ... Read More

Power Discrete Devices N Type Super Junction MOSFET with Large EMI Margin Product Description: One of the standout features of the Lingxun Super Junction MOSFET is its very high commutation ruggedness. This ... Read More

Power Discrete Devices Super Junction MOSFET with N-Type and Large EMI Margin Product Description: One of the key advantages of the Super Junction MOSFET is its 100% avalanche tested design, which ensures ... Read More

650V Smartphones Lower On-Resistance Super Junction Mosfet For PFC Product Description: One of the key features of this MOSFET is its 100% avalanche tested performance, which ensures that it can withstand even ... Read More

Product Description: Introducing our advanced Inverter IGBT, designed to meet the needs of modern power electronics applications. This Power Semiconductor device offers exceptional performance and reliability, ... Read More