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Product Description: With its high voltage capacity, this High Power Semiconductor product can handle high voltage applications with ease. It is also designed with low junction capacitance, which makes it ... Read More

Product Description: Power Semiconductor With Low Junction Capacitance And Temperature Resistance For High Efficiency High Voltage Power Semiconductors are characterized by their ability to handle high voltages ... Read More

Product Description: Voltage N Channel High Temperature Resistant Low Leakage Low Junction Capacitance Power Semiconductor The High Power Semiconductor is a powerful product that is designed for a wide range of ... Read More

High Voltage Tolerance Power Semiconductor For Power Converter Product Description: The High Power Semiconductor product line features high voltage semiconductors with N-type characteristics. With their high ... Read More

Power Discrete Devices Silicon Carbide Schottky Barrier Diode For LED Lighting Product Description: The Silicon Carbide Schottky Barrier Diode (SBD) is a high power, high efficiency diode that is made using ... Read More

N Channel 15A 650V High Power IGBT TO-220F For Home Appliances MAIN CHARACTERISTICS IC @TC=100 15A VCE 650V VCE(sat)-typ 1.60V FEATURES High ruggedness performance 10s short circuit capability Positive VCE (sat... Read More

40A 650V High Frequency N Channel Enhancement Mode Power IGBT For PFC MAIN CHARACTERISTICS Ic(A):40A Vces(V):650V VGES(V):20 TRR(nS):33nS FEATURES Trench and field-stop technology Easy parallel switching ... Read More

50A 650V Easy Parallel Switching High Power IGBT For Uninterruptible Power Supplies MAIN CHARACTERISTICS Ic @TC=100 50A VCE 650V VCE(sat)-typ 1.8V FEATURES Trench and field-stop technology Easy parallel ... Read More

50A 650V Reliable And Rugged Low Frequency Power IGBT For Portable Power Station MAIN CHARACTERISTICS Ic @TC=100 50A VCE 650V VCE(sat)-typ 1.65V FEATURES Positive temperature coefficient Fast Switching Low VCE... Read More

60A 650V Low switching loss Low Frequency Power IGBT For Boost MAIN CHARACTERISTICS Ic @TC=100 60A VCE 650V VCE(sat)-typ 1.7V FEATURES Positive temperature coefficient Fast Switching Low VCE(sat) Reliable and ... Read More